| 发明名称 |
METHODS OF FORMING GAP FILL AND LAYERS FORMED THEREBY |
| 摘要 |
A method of forming a fill layer over a layer in a semiconductor stack having gaps of high aspect ratio topography, and products produced thereby. |
| 申请公布号 |
WO02091451(A2) |
申请公布日期 |
2002.11.14 |
| 申请号 |
WO2002US14653 |
申请日期 |
2002.05.07 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YUAN, ZHENG |
| 分类号 |
H01L21/31;H01L21/316;H01L21/469;H01L21/768;H01L27/108 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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