发明名称 |
SILICON SOLAR CELL WITH GERMANIUM BACKSIDE SOLAR CELL |
摘要 |
A multijunction solar cell comprising a silicon solar cell with a germanium solar cell formed on the backside of the silicon solar cell. The silicon solar cell and germanium solar cell are directly coupled via a p-p junction to inactivate interface dislocations. Preferably, the silicon solar cell comprises a p++ type silicon layer; an intrinsic silicon layer formed on the p++ type silicon layer; an n++ type silicon layer formed on the intrinsic type silicon layer; and a p-type silicon layer formed on the n++ type silicon layer. The germanium solar cell preferably comprises an n-type germanium layer; and a p-type germanium layer form on the n-type germanium layer. The p-type germanium layer is coupled to the p++ type silicon layer. |
申请公布号 |
WO02091482(A2) |
申请公布日期 |
2002.11.14 |
申请号 |
WO2002US14385 |
申请日期 |
2002.05.08 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;KIMERLING, LIONEL, C. |
发明人 |
WADA, KAZUMI |
分类号 |
H01L31/00;H01L31/0687;H01L31/078 |
主分类号 |
H01L31/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|