发明名称 SILICON SOLAR CELL WITH GERMANIUM BACKSIDE SOLAR CELL
摘要 A multijunction solar cell comprising a silicon solar cell with a germanium solar cell formed on the backside of the silicon solar cell. The silicon solar cell and germanium solar cell are directly coupled via a p-p junction to inactivate interface dislocations. Preferably, the silicon solar cell comprises a p++ type silicon layer; an intrinsic silicon layer formed on the p++ type silicon layer; an n++ type silicon layer formed on the intrinsic type silicon layer; and a p-type silicon layer formed on the n++ type silicon layer. The germanium solar cell preferably comprises an n-type germanium layer; and a p-type germanium layer form on the n-type germanium layer. The p-type germanium layer is coupled to the p++ type silicon layer.
申请公布号 WO02091482(A2) 申请公布日期 2002.11.14
申请号 WO2002US14385 申请日期 2002.05.08
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY;KIMERLING, LIONEL, C. 发明人 WADA, KAZUMI
分类号 H01L31/00;H01L31/0687;H01L31/078 主分类号 H01L31/00
代理机构 代理人
主权项
地址