METHOD OF FORMING FLOATING GATE OF FLASH MEMORY USING SIDEWALL METHOD TO REDUCE NUMBER OF PRODUCING PROCESSES AND PRODUCTION COST

摘要

PURPOSE: A method of forming a floating gate of a flash memory using a sidewall method is provided to reduce the number of producing processes and the production cost by forming a poly sidewall on a sidewall of a trench region of an insulating layer. CONSTITUTION: An insulating layer is deposited and etched on an STI substrate. A floating gate poly is deposited thereon. A poly sidewall is formed by etching the floating gate poly. The insulating layer is removed therefrom. CSD(Cell Source Drain) ions for a floating gate are implanted therein. A pattern is removed therefrom and an ONO is deposited thereon. A control gate poly and a select gate poly are deposited thereon. The control gate poly and the select gate poly are etched. The CSD ions for the select gate are implanted therein.