METHOD FOR CONTROLLING CHARGED PARTICLE OF PLASMA ETCHER IN SEMICONDUCTOR

摘要

PURPOSE: A method for controlling an electrified alien substance in a semiconductor plasma etching system is provided to improve a yield of a wafer by removing an alien substance from a surface of the wafer. CONSTITUTION: A condition of a process chamber is set up. A source power and a bias power are applied to an upper electrode and a lower electrode, respectively. A specific pattern is formed on a wafer by supplying a process gas under a condition that the source power is applied to the upper electrode and the bias power is not applied to the lower electrode. Plasma is formed by supplying an inert gas. A cooling gas is exhausted from a bottom face of the wafer. The plasma is formed and a chucking force is removed to transfer the wafer.