发明名称 Mask set for fabricating integrated circuits and method of fabricating integrated circuits
摘要 A mask set is described. In one implementation, the mask set includes: a first plurality of base layer masks, where each base layer mask of the first plurality of base layer masks includes a plurality of base layer tiles of a first tile size; a first plurality of top layer masks, where each top layer mask of the first plurality of top layer masks includes a plurality of first top layer tiles of the first tile size; and a second plurality of top layer masks, where each top layer mask of the second plurality of top layer masks includes a plurality of second top layer tiles of a second tile size; where the second tile size is different from the first tile size. Also, a method of fabricating a plurality of integrated circuits (ICs) is described.
申请公布号 US9401281(B1) 申请公布日期 2016.07.26
申请号 US201414281515 申请日期 2014.05.19
申请人 Altera Corporation 发明人 Plofsky Jordan;Lim Chooi Pei;Biran Danny;Chow Francis Man-Chit
分类号 G03F9/00;H01L21/283;H01L21/78;H01L23/544 主分类号 G03F9/00
代理机构 代理人
主权项 1. A mask set comprising: a first plurality of base layer masks, wherein each base layer mask of the first plurality of base layer masks includes a plurality of base layer tiles of a first tile size; a first plurality of top layer masks, wherein each top layer mask of the first plurality of top layer masks includes a plurality of first top layer tiles of the first tile size; and a second plurality of top layer masks, wherein each top layer mask of the second plurality of top layer masks includes a plurality of second top layer tiles of a second tile size; wherein the second tile size is different from the first tile size.
地址 San Jose CA US