| 发明名称 |
RESISTIVE MEMORY DEVICE WITH RING-SHAPED METAL OXIDE ON TOP SURFACES OF RING-SHAPED METAL LAYER AND BARRIER LAYER |
| 摘要 |
A resistive memory device is provided, comprising a bottom electrode, a patterned dielectric layer with a via formed on the bottom electrode, a barrier layer formed at sidewalls and a bottom surface of the via as a liner, a ring-shaped metal layer formed at sidewalls and a bottom surface of the barrier layer, and a ring-shaped metal oxide formed on a top surface of the ring-shaped metal layer. |
| 申请公布号 |
US2016225983(A1) |
申请公布日期 |
2016.08.04 |
| 申请号 |
US201514603390 |
申请日期 |
2015.01.23 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
Lin Yu-Yu;Lee Feng-Min;Chiang Kuang-Hao;Lee Ming-Hsiu |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistive memory device, at least comprising:
a bottom electrode; a patterned dielectric layer with a via formed on the bottom electrode; a barrier layer formed at sidewalls and a bottom surface of the via as a liner; a ring-shaped metal layer formed at sidewalls and a bottom surface of the barrier layer; and a ring-shaped metal oxide formed on a top surface of the ring-shaped metal layer. |
| 地址 |
Hsinchu TW |
