发明名称 |
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage device including: a semiconductor substrate; a source region and a drain region that are formed in the semiconductor substrate so as to be separated from each other and so as to define a channel region therebetween; a tunnel insulating film that is formed on the channel region; an insulative charge storage film that is formed on the tunnel insulating film; a conductive charge storage film that is formed on the insulative charge storage film so as to be shorter than the insulative charge storage film in a channel direction; an interlayer insulating film that is formed on the conductive charge storage film; and a gate electrode that is formed on the interlayer insulating film. |
申请公布号 |
US2016225910(A1) |
申请公布日期 |
2016.08.04 |
申请号 |
US201615095936 |
申请日期 |
2016.04.11 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
ISHIHARA Takamitsu;MURAOKA Koichi |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
1. A nonvolatile semiconductor storage device comprising:
a semiconductor substrate; a source region and a drain region that are formed in the semiconductor substrate so as to be separated from each other and so as to define a channel region therebetween; a tunnel insulating film that is formed on the channel region; an insulative charge storage film that is formed on the tunnel insulating film; a conductive charge storage film that is formed on the insulative charge storage film so as to be shorter than the insulative charge storage film in a channel direction; an interlayer insulating film that is formed on the conductive charge storage film; and a gate electrode that is formed on the interlayer insulating film. |
地址 |
Minato-ku JP |