SEMICONDUCTOR DEVICE WITH TUNABLE WORK FUNCTION

摘要

The metal-oxide semiconductor structure includes a substrate, a gate dielectric multi-layer, an etch stop layer, a work function metallic layer, a barrier layer and a silicide layer. The substrate has a trench. The gate dielectric multi-layer overlies the trench, in which the gate dielectric multi-layer includes a high-k capping layer with a fluorine concentration substantially in a range from 1 at % to 10 at %. The etch stop layer is disposed on the gate dielectric multi-layer. The work function metallic layer is disposed on the etch stop layer. The barrier layer is disposed on the work function metallic layer. The silicide layer is disposed on the barrier layer.

主权项

1. A metal-oxide semiconductor structure, comprising:
a substrate with a trench; a gate dielectric multi-layer overlying the trench, wherein the gate dielectric multi-layer includes a high-k capping layer with a fluorine concentration substantially in a range from 1 at % to 10 at %; an etch stop layer disposed on the gate dielectric multi-layer; a work function metallic layer disposed on the etch stop layer; a barrier layer disposed on the work function metallic layer; and a silicide layer disposed on the barrier layer.