| 发明名称 | Integrated multilayer magnetoresistive sensor and manufacturing method thereof | ||
| 摘要 | A magnetic-field sensor includes: a chip including a substrate having a first surface and an insulating layer covering the first surface; first and second magnetoresistors each extending into the insulating layer and having a main axis of magnetization and a secondary axis of magnetization; a first magnetic-field generator configured to generate a first magnetic field having field lines along the main axis of magnetization of the first magnetoresistor; a second magnetic-field generator configured to generate a second magnetic field having field lines along the main axis of magnetization of the second magnetoresistor. The main axes of magnetization extending transversely to each other and the secondary axes of magnetization extending transversely to each other. The first and second magnetoresistors extend into the insulating layer at a first distance and a second distance, respectively, that differ from one another, from the first surface. | ||
| 申请公布号 | US9423474(B2) | 申请公布日期 | 2016.08.23 |
| 申请号 | US201313929635 | 申请日期 | 2013.06.27 |
| 申请人 | STMICROELECTRONICS S.R.L. | 发明人 | Paci Dario;Zerbini Sarah;Vigna Benedetto |
| 分类号 | G01R33/09;G01R33/00;G01R33/02 | 主分类号 | G01R33/09 |
| 代理机构 | Seed IP Law Group PLLC | 代理人 | Seed IP Law Group PLLC |
| 主权项 | 1. A magnetic-field sensor, comprising: a substrate having a first surface and a second surface; an insulating layer on the first surface; a first magnetoresistor extending in the insulating layer and having a main axis of magnetization and a secondary axis of magnetization; a second magnetoresistor extending in the insulating layer and having a main axis of magnetization and a secondary axis of magnetization, the main axis of magnetization of the second magnetoresistor extending in a direction transverse to the main axis of magnetization of the first magnetoresistor and the secondary axis of magnetization of the second magnetoresistor extending in a direction transverse to the secondary axis of magnetization of the first magnetoresistor; a first magnetic-field generator configured to generate a first magnetic field having field lines along the main axis of magnetization of the first magnetoresistor; and a second magnetic-field generator configured to generate a second magnetic field having field lines along the main axis of magnetization of the second magnetoresistor, wherein the first and second magnetoresistors extend in the insulating layer at respective first and second distances from the first surface, the first and second distances being different from one another. | ||
| 地址 | Agrate Brianza IT | ||