发明名称 Stacked Half-Bridge Package
摘要 According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package further includes a sync transistor having a sync drain for connection to the output terminal, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. The control and sync transistors are stacked on opposite sides of a common conductive leadframe with the common conductive leadframe electrically and mechanically coupling the control source with the sync drain. The common conductive leadframe thereby serves as the output terminal.
申请公布号 US2016260697(A1) 申请公布日期 2016.09.08
申请号 US201615157298 申请日期 2016.05.17
申请人 Infineon Technologies Americas Corp. 发明人 Cho Eung San;Cheah Chuan;Sawle Andrew N.
分类号 H01L25/00;H01L21/48;H01L25/07;H01L23/495;H01L23/00 主分类号 H01L25/00
代理机构 代理人
主权项
地址 El Segundo CA US