METHOD FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE

摘要

Provided is a method for manufacturing a group-III nitride semiconductor crystal substrate, comprising performing homoepitaxial growth of a group-III nitride single crystal by a vapor-phase growth method on the principal surface of a group-III nitride single crystal grown as a see crystal substrate by a liquid-phase growth method, the method for manufacturing a group-III nitride semiconductor crystal substrate wherein the principal surface of the seed crystal substrate is a +C surface, and the concentration of oxygen atoms in the crystal in the vicinity of the principal surface of the seed crystal substrate is 1×1017 cm-3 or less throughout the entire in-plane area thereof.