| 摘要 |
PURPOSE:To increase yield of grating manufacture by forming a greater refractive index waveguide layer on the groove of a grooved semiconductor crystal except longer direction and stacking the first clad layer, an active layer, the second clad layer and the third clad layer. CONSTITUTION:A groove is formed on a semiconductor crystal 1 (InP). On the groove, an InGaAsP quaternary crystal is laminated so that the surface of which becomes flat. Then, the quaternary crystal on a part of longer direction of the groove is removed and a grating 20 is formed on a distribution reflection region 40. On the grating 20, the first clad layer 3 (N type InP), an active layer 4 (InGaAsP), an InGaAsP layer which has smaller refractive index and band gap greater than those of an active layer which will become the second clad layer 5, the third clad layer 6 (InP) and a gap layer 7 (InGaAsP) for ohmic contact are stacked one upon another. |
