| 摘要 |
PURPOSE:To prevent the instability of operation of an MIS.FET using a(amorphous)Si:H thin film as a material caused by the condition that the device is subjected to high temperature or to ionizing radiation irradiation by forming a gate insulating layer on the surface of the amorphous Si between the source and drain regions as an Si nitride film. CONSTITUTION:A P type a.Si:H thin film 2 is formed on a crystal substrate 1 and the surface of said thin film 2 is entirely covered with an Si nitride film 5 except a part of that on the source region 3 and the drain region 4 of the MIS.FET. The regions 3 and 4 are formed by introduction of N type impurities through the windows 3' and 4' opened on the Si nitride film 5. The Si nitride film 5' covering the substrate between the regions 3 and 4 functions as a gate insulating layer of the MIS.FET and the Si nitride film 5 except said film 5' functions as a passivation film of the field region. A gate electrode 6, a source electrode and a source wiring 7 and a drain electrode 8 are formed out of thin films. |
