| 摘要 |
PURPOSE:To reduce threshold current by increasing current density, applying magnetic field to a cavity while coinciding the magnetic flux density direction with nearly equal direction of the current, and restraining the flow of the transverse direction of the current and concentrating the current. CONSTITUTION:In the planar type of a double hetero-junction type semiconductor laser, an N type AlxGa1-xAs (x=0.3) layer 2, a P type GaAs layer 3, a P type AlxGa1-xAs (x=0.3) layer 4 and an N type GaAs layer 5 are each sequentially crystallized and grown on an N type GaAs substrate 1. Then, a P type region is formed in a region 6 diffusing Zn. The current I flows in the direction of arrow from the N type GaAs layer 5 to the N type GaAs layer 1 and the magnetic field is provided so that the magnetic flux density B coincides with the direction of the current I. |
