| 摘要 |
PURPOSE:To obtain excellent lift-off pattern by forming a pattern on a substrate through two layers of photoresists having large and small thermal changes and then by obtaining an over-hang type photo resist pattern through the heating process. CONSTITUTION:A photo resist 12 shown a large thermal change is formed on a substrate 11 and then a second photo resist 13 showing a small thermal change thereon. Next, the desired resist pattern 15 is formed by forming the second layer of resist pattern 13' through exposure using the mask and the first layer of resist pattern 12'. Thereafter, the over-hang resist pattern 16 is obtained through difference of thermal changes of patterns 12' and 13' by the post-baking. After vacuum depositing a metal 17, the resist is removed and simultaneously unnecessary metal on the photo resist is also removed. Thus, the desired metal pattern 18 having excellent edge can be obtained. |
