| 摘要 |
A sense amplifier includes two cross-coupled pull down field effect transistors, each connected to a respective pull up field effect transistor and to respective bit lines for receiving sensed signals from a memory cell. During a sensing operation, two inverter circuits in response to sensed signals on the bit lines selectively disable the pull up transistor associated with the lower sensed signal and enable the pull up transistor associated with the higher sensed signal.
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