| 摘要 |
PURPOSE:To make possible an electric field induction junction having a desired inversion layer by a method wherein a semiconductor wafer is dipped in a solution made by adding metal ions to an acid solution containing a specified alkaline solution as its main component and an oxide film containing a metal to act as a negative charge is formed on the surface of the wafer. CONSTITUTION:A treating liquid made by adding an aqueous solution of 1 ml containing Al of a concentration of 1000 ppm to an alkaline solution made by mixing an ammonia aqueous solution, hydrogen peroxide water and water in the ratio of 0.2:1:10 is put in a container, is heated to 87.5 + or -2.5 deg.C and after an n-type silicon wafer 1 is dipped in the treating liquid for 15 minutes, the wafer is cleaned with pure water and is dried and thereafter, is left to stand in a clean chamber for 10 minutes to several hours. Thereby, a natural oxide film 2 is formed on the surface of the wafer. |
