发明名称 Circuit for preventing saturation of a transistor
摘要 PCT No. PCT/JP91/00219 Sec. 371 Date Oct. 15, 1992 Sec. 102(e) Date Oct. 15, 1992 PCT Filed Feb. 21, 1991 PCT Pub. No. WO91/13491 PCT Pub. Date Sep. 5, 1991.The present invention concerns a current amplifier which is formed by a transistor, with a view to preventing oversaturation of the transistor. The transistor saturation preventing circuit, according to the invention, includes a second transistor (Q2) which constitutes a current mirror circuit with respect to a first transistor (Q1) forming the current amplifier, a saturation detecting element (R1) connected to the second transistor (Q2) to detect saturation of the first transistor (Q1), and a current feedback element (D1), so as to decrease the base current of the first transistor (Q1).
申请公布号 US5373252(A) 申请公布日期 1994.12.13
申请号 US19920920469 申请日期 1992.10.15
申请人 SANKYO SEIKI MFG. CO., LTD. 发明人 NAITO, HAYATO
分类号 H03F1/32;H03F3/343;H03K17/0422;H03K19/013;(IPC1-7):H03F3/04 主分类号 H03F1/32
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