发明名称 DRY ETCHING METHOD
摘要 PURPOSE:To prevent the contamination with the metal from an etching chamber by protecting the metal or metallic compd. constituting the etching chamber without deteriorating the etching characteristic. CONSTITUTION:The valves in the gas introducing unit 11 for the lines of not only chlorine 15 but also oxygen 14 are opened when the gases are introduced, the amt. of oxygen mixed in the chlorine is accurately controlled by a mass flow controller 12, and the gaseous mixture is introduced into a vacuum chamber 3. As a result, the variation of the etching rate and uniformity with time is prevented.
申请公布号 JPH07331460(A) 申请公布日期 1995.12.19
申请号 JP19940142213 申请日期 1994.06.02
申请人 NIPPON TELEGR & TELEPH CORP <NTT>;TOKYO ELECTRON LTD 发明人 SATO MASAAKI;ARITA MUTSUNOBU;OGASAWARA MASAHIRO;SATO HIDENORI;KANBARA HIROMITSU
分类号 C23F1/12;C23F4/00;H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):C23F1/12;H01L21/306 主分类号 C23F1/12
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