| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor luminous element of high luminous efficiency even with a semiconductor luminous element, where a gallium nitride group compound semiconductor is laminated ton an insulating substrate, improving ohmic contact characteristic between an n-type layer and an n-side electrode, for decreasing a forward voltage. SOLUTION: This element comprises a substrate 1, a semiconductor lamination part 10 here a gallium nitride group compound semiconductor layer containing an n-type layer 3 and an n-type layer 5 in so laminated as to form a luminous layer on the substrate 1, and an n-side electrode 9 and a p-side electrode 8 provided while being electrically connected to the n-type layer and the p-type layer, respectively, of the semiconductor lamination part 10. Here, the n-type layer 3 has at least an n-type first layer 3a and an n<+> -type second layer 3b, so that a carrier concentration at a part where the n-side electrode 9 is provided is higher than that at a part waking contact with the luminous layer. |
