LONG RANGE ORDERED AND EPITAXIAL OXIDES INCLUDING SiO2, ON Si, SixGe1-x, GaAs AND OTHER SEMICONDUCTORS, MATERIAL SYNTHESIS, AND APPLICATIONS THEREOF

摘要

A semiconductor processing method capable of producing highly ordered, ultra thin dielectrics, including gate oxide and other semiconductor dielectrics, and interphase phases with low defect density. The process is capable of forming dielectric layers with low interface defect density, low flat-band voltages, and a low fixed charge on Si, SixGe1-x, GaAs, Si1-x-yGexCy, Si3(1-x)Ge3xN4(1- delta ), Ge, Ga1-xAlxAs, SixGe(1-x)(OyN1-y)n, Si1-x-yGexCy(OzN1-z)n and (Si1-x-yGexCy)3N4-x-y. Ultra-thin layers of between 1/2 to 10 nm and thicker have been formed on Si(100). Devices, dielectrics and interphase phases formed using this process are claimed as well.