| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which can be lessened in size as a whole including bonding wires and keeping high in emission brightness, even if it is formed of a composite element where a light emitting element and an element of another kind are assembled into one. SOLUTION: An electrostatic protection Si diode 28 is mounted on a mounting surface such as a load frame, a board or the like, a semiconductor light emitting element 27 of flip chip type is mounted on the upside of the Si diode 28 applying a current to it opposite in polarity through micro bumps 33 and 34 for the formation of a semiconductor light emitting device, where the surface of the semiconductor light emitting element 27 opposite to its mounting surface is made to serve as a primary light extracting surface. The mounting surface (partly recessed surface) of the Si diode 28 where the semiconductor light emitting element 27 is mounted is set lower than the top of the Si diode 28, so that a sloping wall between the top and recessed mounting surface of the Si diode 28 is capable of functioning as a reflecting surface, and the semiconductor light emitting device of this constitution can be lessened in height as a whole. |
