发明名称 X-ray reduction projection exposure system of reflection type
摘要 <p>An X-ray exposure apparatus includes a stage (1) for holding a reflection type mask (MS) having a multilayered reflection pattern for circuit manufacturing, a stage (50) for holding a wafer (WF) to be exposed to the pattern of the mask with X-rays, and a reflection reduction imaging system, disposed between the mask stage and the wafer stage, including a reflecting mirror arrangement, containing a plurality of curved reflecting mirrors (M1, M2, M3) coated with multilayer films, for receiving X-rays from a mask (MS) and directing them to a wafer (WF) to expose the wafer to the pattern of the mask with the X-rays in a reduced scale. &lt;IMAGE&gt;</p>
申请公布号 EP0947882(A2) 申请公布日期 1999.10.06
申请号 EP19990201981 申请日期 1987.07.08
申请人 CANON KABUSHIKI KAISHA 发明人 SUZUKI, MASAYUKI;MOCHIZUKI, NORITAKA;MINAMI, SETSUO;OGURA, SHIGETARO;FUKUDA, YASUAKI;WATANABE, YUTAKA;KAWAI, YASUO;KARIYA, TAKAO
分类号 G02B17/06;G03F7/20;(IPC1-7):G03F7/20 主分类号 G02B17/06
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