发明名称 |
X-ray reduction projection exposure system of reflection type |
摘要 |
<p>An X-ray exposure apparatus includes a stage (1) for holding a reflection type mask (MS) having a multilayered reflection pattern for circuit manufacturing, a stage (50) for holding a wafer (WF) to be exposed to the pattern of the mask with X-rays, and a reflection reduction imaging system, disposed between the mask stage and the wafer stage, including a reflecting mirror arrangement, containing a plurality of curved reflecting mirrors (M1, M2, M3) coated with multilayer films, for receiving X-rays from a mask (MS) and directing them to a wafer (WF) to expose the wafer to the pattern of the mask with the X-rays in a reduced scale. <IMAGE></p> |
申请公布号 |
EP0947882(A2) |
申请公布日期 |
1999.10.06 |
申请号 |
EP19990201981 |
申请日期 |
1987.07.08 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SUZUKI, MASAYUKI;MOCHIZUKI, NORITAKA;MINAMI, SETSUO;OGURA, SHIGETARO;FUKUDA, YASUAKI;WATANABE, YUTAKA;KAWAI, YASUO;KARIYA, TAKAO |
分类号 |
G02B17/06;G03F7/20;(IPC1-7):G03F7/20 |
主分类号 |
G02B17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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