发明名称 Wide band cross point switch using MEMS technology
摘要 A multilayer switching assembly for switching high frequency signals has MEMS structures on a ceramic substrate having a top surface 500 , a bottom surface and a plurality of insulating layers ( 510,512,514 ). The insulating layers are separated by at least a first conductor 502 and a second conductor 504 . The first conductor 502 is connected to a ground potential. The second conductor 504 is separated from the first conductor 502 by one of the insulating layers. The second conductor presents a specific impedance (50 ohms) with respect to the first conductor to high frequency signals traveling on the second conductor. 64 MEMS structures (e.g. 540,708,716,718, 720 ) are mounted on the top surface. Each MEMS has an input, an output, and a control. The input connected to the second conductor. The output is connected to a coplanar waveguide ( 508 ) placed on the top surface ( 500 ). The control is connected to the bottom surface. The input to each MEMS is electrically separated from the output and from the control by a third conductor ( 534,550,532,530 ) connected to the first (grounded) conductor ( 502 ). The third conductor traverses one or more of the insulating layers thereby acting as a shield and precluding the high frequency signals presented to the input from propagating to the output and to the control. The 64 MEMS are arranged in a square 8 by 8 matrix, as well as their controls. High frequency inputs and outputs to be switched by the MEMS are placed on the periphery of the substrate to further enhance the separation of signals. Terminating resistors (50 ohms) are also placed near the periphery.
申请公布号 US7034373(B2) 申请公布日期 2006.04.25
申请号 US20040003031 申请日期 2004.12.03
申请人 RAYTHEON COMPANY 发明人 ALLISON ROBERT C.;LEE JAR J.
分类号 H01L29/84;H01H1/00;H01H67/22;H01P1/12 主分类号 H01L29/84
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