| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, where patterning of even a fine underlying pattern can be performed without making a alignment shift occur. SOLUTION: Negative resist 21 is flatly coated on foundation on which a convex portion 16 is formed, and an upper layer antireflection film 22 is uniformly coated. Next, overlap exposure is performed using a mask 24 for an exposure pattern 25 longer to both ends than the length of a desired resist pattern 29. PEB is conducted to diffuse a basic compound in the upper layer antireflection film 22 on a resist upper layer 26. Thus, acid produced on an exposure section upper layer 27 is deactivated to restrict bridging. Then, development is performed to form the resist pattern 29. In this case, by performing overlap exposure, the resist pattern 29 whose both ends are adhered to the sidewalls of the convex portion 16. The exposure section upper layer 27 is removed and an exposure section lower layer 28 is exposed to developer. Thus, the both ends of the resist pattern 29 remaining on the convex portion 16 are removed, and it is possible to form the resist pattern 29 having a desired length. COPYRIGHT: (C)2003,JPO |
