发明名称 Photodetector manufacturable by semiconductor processes
摘要 A photodetector includes a semiconductor substrate having photo-cells ( 1 a , 1 b , 1 c). Each photo-cell is provided with a filter layer 20 that transmits light in a wavelength range predetermined for the photo-cell, and a photoelectric converter 17 that generates a signal charge according to an intensity of the light transmitted through the filter layer 20 . Thickness (ta, tb, tc) of the filter layers 20 are corresponding to the wavelength ranges predetermined for respective photo-cells. By such a structure, it is possible to provide cost effective photodetectors that can be manufactured without managing materials for pigments and dyestuff for different colors when making color filters.
申请公布号 US7262404(B2) 申请公布日期 2007.08.28
申请号 US20040990679 申请日期 2004.11.18
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YAMAGUCHI TAKUMI;KASUGA SHIGETAKA;MURATA TAKAHIKO
分类号 H01L31/00;G01J1/02;H01L27/14;H01L27/146;H01L31/0232 主分类号 H01L31/00
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