发明名称 |
Scribe-line structures and methods of forming the same |
摘要 |
Scribe-line structures and methods of forming such scribe-line structures on a face of a semiconductor substrate are provided. By means of the scribe-line structures and the methods of this invention, physical shock and cracking tendencies along a semiconductor substrate can be minimized during performance of a cutting process on the semiconductor substrate as part of post-fabrication processing. A representative method according to this invention comprises the sequential steps of: forming a lower layer on a semiconductor substrate; forming a molding layer on the lower layer such that the molding layer includes at least one protective contact hole; subsequently forming a dielectric layer and an upper layer on the molding layer so as to fill the protective contact hole, such dielectric layer being formed of a material having a greater mechanical intensity than that of the molding layer; and then forming protective layer patterns on the upper layer. |
申请公布号 |
US7358155(B2) |
申请公布日期 |
2008.04.15 |
申请号 |
US20060335359 |
申请日期 |
2006.01.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN JEONG-HOON;SHIN HEON-JONG |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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