发明名称 |
Verfahren zur Herstellung eines Feldeffekttransistors |
摘要 |
A method for fabricating a field effect transistor, in which, after the etching of the gate electrode, the removal of the etching mask is omitted since the etching mask serves as a gate dielectric. The etching mask or the dielectric has a self-assembled monolayer of an organic compound. |
申请公布号 |
DE102004009601(B4) |
申请公布日期 |
2008.03.20 |
申请号 |
DE20041009601 |
申请日期 |
2004.02.27 |
申请人 |
QIMONDA AG |
发明人 |
ZSCHIESCHANG, UTE;KLAUK, HAGEN;HALIK, MARCUS;SCHMID, GUENTER;BRAUN, STEFAN |
分类号 |
H01L51/40;H01L21/336;H01L21/8234;H01L51/05;H01L51/10 |
主分类号 |
H01L51/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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