| 摘要 |
<p>A method for fabricating small pattern is provided to form micro-pattern which partly has the other line width with a single photomask by using the spacer formation process. A method for fabricating small pattern is comprised of steps: forming a first sacrificed pattern(351) is arranged as the first interval on the object layer; arranging the second and the third sacrificed pattern(353,355) as the second interval which becomes smaller than the first interval; adhering the first part of spacer to the side wall of the first sacrificed pattern; adhering second part of spacer on the side wall to fill the second interval part up; selectively removing the sacrificed pattern; making the width of first and second of the spacer by electively etching the spacer with an etching mask.</p> |
