METHOD FOR MANUFACTURING OF IMAGE SENSOR

摘要

A manufacturing method of an image sensor is provided to reuse the wafer in case a defect is generated in a wafer by using a wet etching process with an etch selectivity of a low temperature oxide film which is a micro lens and an USG(Undoped Silicate Glass) film which is a protective layer. A unit pixel(20) including a photo diode is formed on a semiconductor substrate(10). An interlayer insulation film(30) including a metal wiring and a pad is formed on the semiconductor substrate. A protective layer(50) is formed on the interlayer insulation film. A color filter(60) is formed on the protective layer corresponding to the unit pixel. A seed lens(85) is formed on the color filter. A micro lens(95) is formed by depositing an inorganic layer on the seed lens. A pad hole is formed by removing the protective layer and an oxide film of a top part of the pad. The seed lens and the micro lens are removed in case a shape of the micro lens is fault.