| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide new processes for forming amorphous GST, GeTe, and other films in an amorphous manner, but with a relatively high deposition rate. <P>SOLUTION: Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium, tellurium and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [änBuC(iPrN)<SB>2</SB>}<SB>2</SB>Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
