| 摘要 |
SOLUTION: A pattern forming method is provided, which includes: applying a resist composition that comprises a polymer compound having a repeating unit including an acid labile group-substituted carboxyl group, an acid generator, and an organic solvent, on a substrate to form a resist film; exposing the resist film; forming a negative pattern by use of an organic solvent developer; applying a shrink agent solution that comprises a polymer compound having a repeating unit a1 represented by formula (1), an ester solvent and/or a ketone solvent, on the negative pattern; and baking the pattern and then removing the excessive shrink agent by use of the organic solvent developer so as to shrink the size of a space in the pattern. (In formula (1), Rrepresents H or CH; Rrepresents an alkylene group; Rrepresents an alkyl group or an acid-labile group; and Xrepresents a phenylene group or -C(=O)-O-R-, where Rrepresents a single bond, an alkylene group or a phenylene group.)EFFECT: According to the present invention, the size of a space in a resist pattern can be shrunk in a precisely size-controlled manner.SELECTED DRAWING: None |
