SUBSTRATE PROCESSING APPARATUS, GAS DISPERSION UNIT, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

摘要

The present invention improves a feature of a film formed on a substrate and improves a manufacturing throughput. A substrate processing device comprises: a processing chamber configured to process the substrate; a substrate placing stand where the substrate is placed; and a gas dispersion unit including a first supply region facing the substrate wherein a first dispersion hole for supplying a first gas and a second dispersion hole for supplying a second gas are installed in the first supply region and a second supply region facing a surface of an outer circumference side rather than the surface of the substrate placing stand where the substrate is placed wherein the second supply region is formed by a larger hole diameter than the second dispersion hole and a third dispersion hole for supplying the second gas is installed in the second supply region.