发明名称 |
DEFECT REDUCTION IN III-V SEMICONDUCTOR EPITAXY THROUGH CAPPED HIGH TEMPERATURE ANNEALING |
摘要 |
A structure and method for reducing defects within a III-V compound semiconductor layer grown epitaxially on a mismatched crystalline substrate is provided. The III-V compound semiconductor layer may be surrounded by a thermally stable layer on its sides and a thermally stable capping layer on its upper surface. Subsequent to epitaxial growth, the III-V compound semiconductor layer may be subjected to high temperature annealing in a pressurized atmosphere of the corresponding Group V material present in the III-V compound semiconductor layer. The thermally stable layer and the capping layer may prevent the evaporation of the Group V material from the III-V compound semiconductor layer, as well as cure and rearrange the crystalline lattice structure of the III-V compound semiconductor layer thereby reducing defect density. |
申请公布号 |
US2016225641(A1) |
申请公布日期 |
2016.08.04 |
申请号 |
US201514608685 |
申请日期 |
2015.01.29 |
申请人 |
International Business Machines Corporation |
发明人 |
Bedell Stephen W.;Ott John A.;Sadana Devendra K.;Wacaser Brent A.;Yang Min |
分类号 |
H01L21/322;H01L21/02;H01L21/324 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
1. A method of protecting an epitaxially grown III-V compound semiconductor layer during high temperature annealing comprising:
forming a thermally stable layer adjacent to and contacting side surfaces of the III-V compound semiconductor layer; and forming a capping layer on an upper surface of the III-V compound semiconductor layer. |
地址 |
Armonk NY US |