SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

摘要

The inventive concepts provide semiconductor devices and methods of fabricating the same. According to the method, sub-stack structures having a predetermined height and active holes are repeatedly stacked. Thus, cell dispersion may be improved, and various errors such as a not-open error caused in an etching process may be prevented. A grain size of an active pillar used as channels may be increased or maximized using a metal induced lateral crystallization method, so that a cell current may be improved. A formation position of a metal silicide layer including a crystallization inducing metal may be controlled such that a concentration grade of the crystallization inducing metal may be controlled depending on a position within the active pillar.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming sub-stack structures sequentially stacked on a substrate; forming an active pillar sequentially penetrating the sub-stack structures; and increasing a grain size of the active pillar by a metal induced lateral crystallization operation.
wherein increasing the grain size of the active pillar comprises: forming a metal silicide layer including a crystallization inducing metal on a top surface of the active pillar; and performing an annealing process to diffuse the crystallization inducing metal into the active pillar.