| 摘要 |
<p>PURPOSE:To omit mechanical polishing, and to avoid cracking and pollution by a method wherein a V-shaped groove is shaped to the circumferential surface of a diaphragm through alkaline etching at the same time as the diaphragm is formed, and the diaphragm is pasted onto a tape, cut by half and changed into chips. CONSTITUTION:Both surfaces of an Si substrate 1 are coated with SiO2 3, a strain gage 2 is mounted to one main surface and the SiO2 3b of the other surface is bored and etched with alkali, and the V-shaped groove 6 with not more than 50mum depth is formed to the diaphragm 5 and the circumference. The diaphragm is pasted 7 onto the substrate 1 and the tape 8, and cutting grooves 9 are shaped. Stress is applied to the tape 8 and the whole is cracked and changed into the chips, and adhered adhesives are removed by an organic solvent. According to this constitution, the V-shaped groove may be slit up to half the board thickness, the whole is hardly cracked when succeeding breaking and the pressure sensor having high accuracy is obtained, and the sensor is hardly polluted with Si.</p> |
