发明名称 Electronic device manufacturing methods
摘要 In a method of making an electronic device having at least a transparent conductive layer, which includes at least a step of forming a transparent conductive layer member and a step of forming a transparent conductive layer by patterning the transparent conductive layer member using a spot-shaped or linear laser beam or beams, each of which has a short wavelength of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer.
申请公布号 US4874920(A) 申请公布日期 1989.10.17
申请号 US19890298263 申请日期 1989.01.13
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI;ITOH, KENJI;NAGAYAMA, SUSUMU
分类号 B41M5/26;H01L21/302;H01L27/142;H01L31/0224;H01L31/0392;H05K3/02 主分类号 B41M5/26
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