发明名称 |
Electronic device manufacturing methods |
摘要 |
In a method of making an electronic device having at least a transparent conductive layer, which includes at least a step of forming a transparent conductive layer member and a step of forming a transparent conductive layer by patterning the transparent conductive layer member using a spot-shaped or linear laser beam or beams, each of which has a short wavelength of 400 nm or less and optical energy greater than the optical energy band gap of the transparent conductive layer.
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申请公布号 |
US4874920(A) |
申请公布日期 |
1989.10.17 |
申请号 |
US19890298263 |
申请日期 |
1989.01.13 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;ITOH, KENJI;NAGAYAMA, SUSUMU |
分类号 |
B41M5/26;H01L21/302;H01L27/142;H01L31/0224;H01L31/0392;H05K3/02 |
主分类号 |
B41M5/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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