| 摘要 |
The invention relates to a sol-gel method for forming a patterned film of a metal compound, e.g. TiO2, SiO2, ZrO2, Al2O3, TiN or Si3N4, on a substrate by applying a metal alkoxide sol to the substrate, allowing the sol film on the substrate to turn into a gel film by hydrolysis, removing the gel film in the unnecessary area(s) by selective etching and baking the gel film in the remaining aarea(s). The selective etching of the gel film is easily accomplished by the steps of moistening the gel film in the unnecessary area(s) with a viscous liquid containing, e.g., an organic solvent or an organic acid, hardening the gel film in the remaining area(s) by mild heating, and then removing the gel film in the unnecessary area(s) by washing with a suitable liquid such as an alkali solution or, when said viscous solution contains an organic acid and water, water.
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