发明名称 |
Chemical vapor deposition of iron, ruthenium, and osmium |
摘要 |
A method is provided for forming films comprising Fe, Ru or Os employing the techniques of chemical vapor deposition to decompose a vapor comprising an organometallic compound of the formula (a): (CO)4ML or (b): M2[ mu - eta : eta 4-C4](CO)6; wherein L is a two-electron donor ligand and each R is H, halo, OH, alkyl, perfluoroalkyl or aryl; so as to deposit a coating comprising one or more of said metals on the surface of a substrate.
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申请公布号 |
US5372849(A) |
申请公布日期 |
1994.12.13 |
申请号 |
US19940183169 |
申请日期 |
1994.01.18 |
申请人 |
MINNESOTA MINING AND MANUFACTURING COMPANY;REGENTS OF THE UNIVERSITY OF MINNESOTA |
发明人 |
MCCORMICK, FRED B.;GLADFELTER, WAYNE L.;SENZAKI, YOSHIHIDE |
分类号 |
C07F15/00;C07F15/02;C23C16/06;C23C16/18;(IPC1-7):C23C16/00 |
主分类号 |
C07F15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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