发明名称 |
METHOD OF MANUFACTURING A CAPACITOR COUPLED CONTACTLESS IMAGER WITH HIGH RESOLUTION AND WIDE DYNAMIC RANGE |
摘要 |
A capacitor coupled contactless imager structure and a method of manufacturing the structure results in a phototransistor that structure includes an N-type collector region formed in P-type semiconductor material. A P-type base region is formed in the collector region. An n-doped polysilicon emitter contact is formed in contact with the surface of the P-type base region such that an n+ epitaxial region is formed in the base region as the emitter of the phototransistor. Silicon dioxide separates the poly1 emitter content and exposed surfaces at the base region from a layer of poly2 about 3000-4000 ANGSTROM thick that partially covers the base region; the gates of the CMOS peripheral devices are also poly2. The poly2 over the base region serves as a base coupling capacitor and a row conductor for the imager structure. The thickness of the poly2 capacitor plate allows it to be doped utilizing conventional techniques and silicided to improve the RC constant.
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申请公布号 |
WO9745876(A1) |
申请公布日期 |
1997.12.04 |
申请号 |
WO1996US08099 |
申请日期 |
1996.05.24 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
BERGEMONT, ALBERT;CHI, MIN-HWA;HAGGAG, HOSAM |
分类号 |
H01L27/105;H01L27/146;H01L31/11;(IPC1-7):H01L27/146 |
主分类号 |
H01L27/105 |
代理机构 |
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地址 |
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