发明名称 |
SEMICONDUCTOR AND MANUFACTURE OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: To provide a method by which the crystallizing time of amorphous silicon is reduced by lowering the crystallizing temperature of the amorphous silicon and another method by which a thin film transistor is manufactured by using the method. CONSTITUTION: After depositing a base insulating film (e.g. silicon oxide film 22), the insulating film is subjected to plasma treatment by exposing the film to a plasma atmosphere, and then, an amorphous silicon film 25 is deposited and the amorphous silicon is crystallized at 400-600°C. In addition, a part 26 having excellent crystallinity is arbitrary formed by selectively exposing the film 25 to the plasma atmosphere so as to control the part where a crystal core is produced. The semiconductor thus manufactured is used for a thin film transistor. |
申请公布号 |
KR100285864(B1) |
申请公布日期 |
2001.01.08 |
申请号 |
KR19990002855 |
申请日期 |
1999.01.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY K.K. |
发明人 |
TAKAYAMA TORU;ZHANG HONGYONG;YAMAZAKI SHUNPEI;TAKEMURA YASUHIKO |
分类号 |
H01L21/205;H01L21/20;H01L21/336;H01L21/77;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|