| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory having a high voltage circuit for designating the addresses of a plurality of memory cells in a batch, increasing stress on the memory cell or the like while impressing a high voltage for a long time, and ending high voltage test in a shorter time than a conventional manner. SOLUTION: A high voltage circuit is provided with a charging and discharging circuit for charging and discharging a high voltage, level detecting circuits 30 and 40 for detecting that the charged and discharged voltage reaches a prescribed level, and outputting a level detection signal, charging and discharging control signal generating circuit 50 for generating a charging and discharging control signal for controlling the charging and discharging of the charging and discharging circuit based on the level detection signal, and high voltage switching circuit for switching the high voltage according to the charging and discharging control signal. Thus, a high voltage pulse for erasing the writing of data and a high voltage test pulse can be generated.</p> |
