发明名称 PLASMA TREATMENT SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide uniform density of plasma generated under conditions, such as a narrow space between electrodes, and large high-frequency power applied thereto. SOLUTION: A plurality of lower electrodes 28 having almost the same shape as a treating substrate (W) are put in a projected state on an upper face of a scepter 3 at the lower part of a reactive chamber 2, in such a way that the adjoining electrodes 28 are independent of each other. Each upper electrode 26 is provided individually so as to be located above each lower electrode 28 coaxially with the central axial line of the lower electrode 28. Each upper electrode 26 has a plurality of holes for blowing out treatment gas shower-like to a plasma generation region between the upper electrode 26 and the lower electrode 28. Each lower electrode 28 is surrounded by an insulating ring 27, and the height of the ring 27 is made the same level as the upper face of the substrate (W) mounted on the lower electrode 28.
申请公布号 JP2001007033(A) 申请公布日期 2001.01.12
申请号 JP19990177060 申请日期 1999.06.23
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 UKITA KENICHI;RI UNRYU;YAMASUMI NAOYA;SUZUKI HIROSHI
分类号 H01L21/302;C23C16/509;C23F4/00;H01L21/205;H01L21/3065;H05H1/46 主分类号 H01L21/302
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