| 摘要 |
<p>A method of fabricating a semiconductor device comprising following steps. A silicide film is formed on a p<+>-type region that is to become a source/drain. A silicon oxide film has a contact hole through which the silicide film is exposed. Boron ions are implanted into the p<+>-type region through the contact hole. A Ti film is formed on the silicide film. After the Ti film is formed, the semiconductor substrate into which the ions are implanted is annealed at 780 DEG C to 900 DEG C, to form another p<+>-type region that configures the same source/drain. <IMAGE></p> |
