| 摘要 |
PROBLEM TO BE SOLVED: To simply and rapidly clean and remove organic and inorganic impurities present on the surface of a silicon carbide sintered compact by sequentially soaking the silicon carbide sintered compact in a quasi-water organic solvent and an aqueous inorganic acid solution and emitting ultrasonic wave with a specified frequency to the sintered compact during its soaking. SOLUTION: The silicon carbide sintered compact is treated sequentially in a process to soak the compact in a quasi-water organic solvent and a process to soak it in an aqueous inorganic solution and, is treated while an ultrasonic wave with a frequency set at 700 kHz or above is emitted to the compact at least in either of the described processes. That is, first an organic matter (e.g. an oil film, a fingerprint or wax) is removed from the surface of the silicon carbide sintered compact using the quasi-water organic solvent and then a metallic element is removed likewise from the surface and an area near the surface using the aqueous inorganic acid solution. Further, the sintered compact is treated while the ultrasonic wave is emitted to the compact. Thus the compact to be cleaned and the cleaning solution are physically vibrated and an active radical is generated in the cleaning solution to remove the impurities. |
