Process for making wafers for ion implantation monitoring

摘要

A process is disclosed for making a silicon wafer with low and uniform surface stress by growing at least approximately 8 angstroms of silicon oxide thereon to produce a wafer for use as a control wafer in ion implantation. The process involves the steps of (a) subjecting a feed wafer substantially free of oxide or having less than approximately 4 angstroms of silicon oxide thereon to hydrogen termination of the silicon surface; or (b) subjecting such a feed wafer to said hydrogen termination followed by subjecting the resulting wafer to treatment with an oxidant having a standard reduction potential less than approximately 1.77 volts; the wafer resulting from either step (a) or (b) having a TWO reading less than approximately 30 across the entire wafer.