发明名称 |
Hybrid dielectric structure for improving the stiffness of back end of the line structures |
摘要 |
A multi-level, coplanar copper damascene interconnect structure on an integrated circuit chip includes a first planar interconnect layer on an integrated circuit substrate and having plural line conductors separated by a dielectric material having a relatively low dielectric constant and a relatively low elastic modulus. A second planar interconnect layer on the first planar interconnect layer comprises a dielectric film having an elastic modulus higher than in the first planar interconnect layer and conductive vias therethrough. The vias are selectively in contact with the line conductors. A third planar interconnect layer on the second planar interconnect layer has plural line conductors separated by the dielectric material and selectively in contact with the vias.
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申请公布号 |
US6486557(B1) |
申请公布日期 |
2002.11.26 |
申请号 |
US20000515110 |
申请日期 |
2000.02.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DAVIS CHARLES R.;EDELSTEIN DANIEL CHARLES;HAY JOHN C.;HEDRICK JEFFREY C.;JAHNES CHRISTOPHER;MCGAHAY VINCENT;NYE, III HENRY A. |
分类号 |
H01L21/768;H01L21/3205;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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