发明名称 |
Active matrix substrate and manufacturing method thereof |
摘要 |
An active matrix substrate includes a gate electrode, a gate insulating film, a semiconductor layer, a source electrode and a drain electrode, which are sequentially deposited on an insulating substrate. A transparent conductive layer is deposited on the source and drain electrodes so that the transparent conductive layer includes a portion deposited to be substantially the same pattern as those of the source and drain electrodes. The transparent conductive layer is connected to either the source electrode or the drain electrode to form a pixel electrode. A gate line is further included on which the gate insulating film is deposited. The gate line is to be connected to the gate electrode.
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申请公布号 |
US6859252(B2) |
申请公布日期 |
2005.02.22 |
申请号 |
US20040786925 |
申请日期 |
2004.02.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
TSUJIMURA TAKATOSHI;TOKUHIRO OSAMU;MIWA KOHICHI;MOROOKA MITSUO |
分类号 |
G02F1/1333;G02F1/136;G02F1/1368;G09F9/00;G09F9/30;H01L21/3213;H01L21/336;H01L29/786;(IPC1-7):G02F1/136;H01L21/00 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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