| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device which is suitable for improvement in the information storing characteristic of a semiconductor device such as DRAM and SRAM or the like through reduction of a junction leak current resulting from a defect, by processing vacant hole defect remaining in the source-drain diffusing layer. SOLUTION: The method of manufacturing semiconductor device comprises the steps of implanting a dopant to a semiconductor substrate to form a source-drain diffusing layer, and diffusing the dopant within the source-drain diffusing layer with the heat treatment under the acidic gas atmosphere. COPYRIGHT: (C)2005,JPO&NCIPI
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