SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To restrain the diffusion of metal or the like and to secure the strength of a porous insulating film to a certain degree when the porous insulating film is employed as an interlayer insulating film. SOLUTION: The porous insulating film comprising a first insulating material and having vacancies is formed on a sample substrate. A first coated film and a second coated film are formed on the surface of the porous insulating film. The first costed film is constructed by making a second insulating material invade the vacancies located in the vicinity of the surface of the porous insulating film. The second coated film is constructed using the second insulating material. COPYRIGHT: (C)2005,JPO&NCIPI